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New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
6.863
Zitationen
3
Autoren
1980
Jahr
Abstract
Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device. Preliminary data are reported.
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