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Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
4.988
Zitationen
4
Autoren
2009
Jahr
Abstract
This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined..
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